A comparative study of GaAs MESFET backgating

Author

Salmon, L.G.

Author_Institution

Brigham Young Univ., Provo, UT, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

289

Lastpage

292

Abstract

A comparison is made of backgating characteristics between fabricators to illustrate the value of such a comparison and the difficulties encountered in making such a comparison. In this study, a common set of backgating tests is used to correlate results from structures fabricated at different facilities and fabricated using different processes. Wafers from three facilities are compared. A description is presented of the test structure geometry and major process characteristics of the wafers included in this comparison. A comparison is made of backgating between wafers with respect to the major backgating parameters of time response, voltage response, and test structure geometry. The sources of backgating in light of the comparison data are discussed along with the applicability of the jazz standard for backgating measurement.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device testing; GaAs; III-V semiconductors; MESFET; backgating characteristics; backgating tests; jazz standard; process characteristics; test structure; test structure geometry; time response; voltage response; Gallium arsenide; Geometry; Implants; Integrated circuit modeling; Intrusion detection; MESFETs; Oxygen; Testing; Time factors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172694

Filename

172694