DocumentCode
2800601
Title
Suppression of low frequency oscillations for high gain GaAs amplifiers
Author
Koketsu, T. ; Hatta, Y. ; Matsunaga, N. ; Arai, M. ; Kawada, Y. ; Takai, A. ; Umemoto, Y. ; Matsuda, H.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
293
Lastpage
296
Abstract
Devices to suppress low frequency noise have been developed. The devices have recess etched tracks and buried p-type layers to improve the isolation between devices. Fabricated GaAs ICs have been applied to a 2.4 Gb/s optical transmission system and have achieved a minimum optical received power of -33.2 dBm.<>
Keywords
III-V semiconductors; amplifiers; gallium arsenide; linear integrated circuits; optical communication equipment; 2.4 Gbit/s; GaAs; buried p-type layers; isolation; low frequency oscillations; optical received power; optical transmission system; recess etched tracks; Circuit noise; Diodes; FETs; Frequency; Gallium arsenide; Integrated circuit noise; Low-frequency noise; Optical amplifiers; Optical noise; Photonic integrated circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172695
Filename
172695
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