Title :
Suppression of low frequency oscillations for high gain GaAs amplifiers
Author :
Koketsu, T. ; Hatta, Y. ; Matsunaga, N. ; Arai, M. ; Kawada, Y. ; Takai, A. ; Umemoto, Y. ; Matsuda, H.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
Devices to suppress low frequency noise have been developed. The devices have recess etched tracks and buried p-type layers to improve the isolation between devices. Fabricated GaAs ICs have been applied to a 2.4 Gb/s optical transmission system and have achieved a minimum optical received power of -33.2 dBm.<>
Keywords :
III-V semiconductors; amplifiers; gallium arsenide; linear integrated circuits; optical communication equipment; 2.4 Gbit/s; GaAs; buried p-type layers; isolation; low frequency oscillations; optical received power; optical transmission system; recess etched tracks; Circuit noise; Diodes; FETs; Frequency; Gallium arsenide; Integrated circuit noise; Low-frequency noise; Optical amplifiers; Optical noise; Photonic integrated circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172695
