Optically pumped InGaAs/InGaAsP asymmetric quantum well structure for terahertz difference frequency generation using two C-band signals

Author

Maestre, H. ; Lisauskas, A. ; Sartorius, B. ; Roskos, H.G.

Author_Institution

Phys. Inst., Johann Wolfgang Goethe-Univ. Frankfurt, Frankfurt am Main, Germany

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

The concept of terahertz (THz) generation by difference frequency mixing in an active semiconductor structure was implemented using dual-color radiation in the optical C-band (1.53 nm - 1.56 nm).The structure has been grown using a MOVPE technique on an undoped InP substrate. It is composed of two asymmetric InGaAs/InGaAsP quantum wells embedded between two 150-nm-thick InGaAsP waveguide layers with a 2-mum-thick undoped InP cap layer and a 3-mum-thick undoped InP bottom cladding layer.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum wells; vapour phase epitaxial growth; C-band signals; InGaAs-InGaAsP; MOVPE technique; asymmetric quantum well structure; cladding layer; terahertz difference frequency generation; waveguide layers; Epitaxial growth; Epitaxial layers; Frequency; Indium gallium arsenide; Indium phosphide; Nonlinear optics; Optical mixing; Optical pumping; Optical waveguides; Signal generators;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192872

Filename

5192872