Monolithic integration of GaAs LED array/Si CMOS logic

Author

Yang, J.Y. ; Taddiken, A. ; Kao, Y.C.

Author_Institution

Texas Instruments Inc., Dallas, TX, USA

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

301

Lastpage

304

Abstract

Monolithic integration of a linear array of GaAs double heterojunction LEDs with a silicon CMOS logic circuit has been demonstrated for the first time. Maximum output power of 7.4 mu W was achieved for the LEDs, which have a 30 mu m*30 mu m active area. A fully functional prototype circuit consisting of eight GaAs LEDs driven by a 3-bit CMOS decoder was fabricated. Only a single 5 V supply was required for circuit operation. This prototype demonstrates that monolithic integration of GaAs LEDs with a Si CMOS circuit is feasible for low-cost optical I/O for future computing systems.<>

Keywords

CMOS integrated circuits; III-V semiconductors; elemental semiconductors; gallium arsenide; integrated logic circuits; integrated optoelectronics; light emitting diodes; silicon; 5 V; 7.4 muW; CMOS logic; GaAs; LED array; OEIC; Si logic circuits; decoder; double heterojunction LEDs; linear array; logic circuit; low-cost optical I/O; monolithic integration; single 5 V supply; CMOS logic circuits; Decoding; Gallium arsenide; Heterojunctions; Light emitting diodes; Logic arrays; Monolithic integrated circuits; Power generation; Prototypes; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172697

Filename

172697