• DocumentCode
    2800686
  • Title

    Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions

  • Author

    Potlog, T.

  • Author_Institution
    Phys. Dept., Moldova State Univ., Chisinau, Moldova
  • Volume
    2
  • fYear
    2012
  • fDate
    15-17 Oct. 2012
  • Firstpage
    261
  • Lastpage
    264
  • Abstract
    The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
  • Keywords
    dark conductivity; dielectric relaxation; electrochemical impedance spectroscopy; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; zinc compounds; Cole-Cole plot radius; ZnSe-ZnTe-CdTe; ZnSe-ZnTe-CdTe thin film heterojunctions; complex impedance; dark alternating current parameters; dielectrical relaxation mechanism; imaginary parts; impedance spectroscopy; real parts; temperature-dependent mechanism; Capacitance; Heterojunctions; Impedance; Resistance; Spectroscopy; Temperature dependence; Temperature measurement; ZnSe/ZnTe/CdTe thin film heterostructure; dielectrical relaxation mechanism; impedance spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference (CAS), 2012 International
  • Conference_Location
    Sinaia
  • ISSN
    1545-857X
  • Print_ISBN
    978-1-4673-0737-6
  • Type

    conf

  • DOI
    10.1109/SMICND.2012.6400790
  • Filename
    6400790