DocumentCode
2800686
Title
Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions
Author
Potlog, T.
Author_Institution
Phys. Dept., Moldova State Univ., Chisinau, Moldova
Volume
2
fYear
2012
fDate
15-17 Oct. 2012
Firstpage
261
Lastpage
264
Abstract
The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
Keywords
dark conductivity; dielectric relaxation; electrochemical impedance spectroscopy; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; zinc compounds; Cole-Cole plot radius; ZnSe-ZnTe-CdTe; ZnSe-ZnTe-CdTe thin film heterojunctions; complex impedance; dark alternating current parameters; dielectrical relaxation mechanism; imaginary parts; impedance spectroscopy; real parts; temperature-dependent mechanism; Capacitance; Heterojunctions; Impedance; Resistance; Spectroscopy; Temperature dependence; Temperature measurement; ZnSe/ZnTe/CdTe thin film heterostructure; dielectrical relaxation mechanism; impedance spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference (CAS), 2012 International
Conference_Location
Sinaia
ISSN
1545-857X
Print_ISBN
978-1-4673-0737-6
Type
conf
DOI
10.1109/SMICND.2012.6400790
Filename
6400790
Link To Document