DocumentCode :
2800686
Title :
Impedance spectroscopy of ZnSe/ZnTe/CdTe thin film heterojunctions
Author :
Potlog, T.
Author_Institution :
Phys. Dept., Moldova State Univ., Chisinau, Moldova
Volume :
2
fYear :
2012
fDate :
15-17 Oct. 2012
Firstpage :
261
Lastpage :
264
Abstract :
The dark alternating current (ac) parameters of ZnSe/ZnTe/CdTe thin films heterostructures are measured at different temperatures using the impedance spectroscopy. The real and imaginary parts of the complex impedance are changed with the frequency and temperature. Both are decreased with increasing temperature at the lower frequencies and are merged at the higher frequencies. The dielectrical relaxation mechanism of the heterostructure was analyzed by the Cole-Cole plots. With increasing temperature, the radius of the Cole-Cole plots decreases, which suggests a mechanism of temperature-dependent on relaxation.
Keywords :
dark conductivity; dielectric relaxation; electrochemical impedance spectroscopy; semiconductor heterojunctions; semiconductor thin films; wide band gap semiconductors; zinc compounds; Cole-Cole plot radius; ZnSe-ZnTe-CdTe; ZnSe-ZnTe-CdTe thin film heterojunctions; complex impedance; dark alternating current parameters; dielectrical relaxation mechanism; imaginary parts; impedance spectroscopy; real parts; temperature-dependent mechanism; Capacitance; Heterojunctions; Impedance; Resistance; Spectroscopy; Temperature dependence; Temperature measurement; ZnSe/ZnTe/CdTe thin film heterostructure; dielectrical relaxation mechanism; impedance spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
ISSN :
1545-857X
Print_ISBN :
978-1-4673-0737-6
Type :
conf
DOI :
10.1109/SMICND.2012.6400790
Filename :
6400790
Link To Document :
بازگشت