DocumentCode :
2800702
Title :
MMIC circuit optimization using FIB techniques
Author :
Itoh, K. ; Ishikawa, T. ; Komaru, M. ; Orisaka, S. ; Nishitani, K. ; Otsubo, M.
Author_Institution :
Mitsubishi Electric Corp., Hyogo, Japan
fYear :
1991
fDate :
20-23 Oct. 1991
Firstpage :
323
Lastpage :
326
Abstract :
It is reported that focused ion beam (FIB) techniques have been successfully applied to optimization of an X-band single stage MMIC (monolithic microwave integrated circuit) amplifier. Modification of MMIC components has been performed by etching of circuit patterns and depositing tungsten films. RF performance of the MMIC has been adjusted to the designed one without any further wafer process. It shows that these techniques are promising to develop MMICs.<>
Keywords :
MMIC; integrated circuit technology; microwave amplifiers; sputter deposition; sputter etching; FIB techniques; MMIC; RF performance; W film deposition; X-band; amplifier; circuit optimization; circuit patterns; etching; focused ion beam; monolithic microwave integrated circuit; trimming; Circuit optimization; Etching; Ion beams; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits; Radiofrequency amplifiers; Tungsten;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
Type :
conf
DOI :
10.1109/GAAS.1991.172704
Filename :
172704
Link To Document :
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