• DocumentCode
    2800724
  • Title

    The NEGF method: capabilities and challenges

  • Author

    Datta, Supriyo

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
  • fYear
    2004
  • fDate
    24-27 Oct. 2004
  • Firstpage
    61
  • Lastpage
    62
  • Abstract
    This general model has been applied by different authors to all kinds of devices like semiconductor nanowires, carbon nanotubes, molecular wires having different kinds of contacts, both normal and superconducting. Many issues still need to be clarified such as the best choice of basis functions in different problems, but according to the author this approach provides a suitable framework for a wide variety of problems involving nanoscale quantum transport. The objective this paper is to present a simple intuitive description of the NEGF method and draw attention to some areas where important conceptual issues remain to be sorted out. An outstanding feature of this approach is the partitioning of the system into a channel described by an Hamiltonian [H] and "contacts" represented by a self-energy [/spl Sigma/]. This includes not only the obvious metallurgical contacts, but also phonons and other "contact-like" entities.
  • Keywords
    Green´s function methods; carrier mobility; quantum theory; quantum wires; semiconductor device models; NEGF method; carbon nanotubes; contact-like entities; metallurgical contacts; molecular wires; nanoscale quantum transport; phonons; semiconductor nanowires; Charge carrier mobility; Green function; Quantum theory; Semiconductor device modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
  • Conference_Location
    West Lafayette, IN, USA
  • Print_ISBN
    0-7803-8649-3
  • Type

    conf

  • DOI
    10.1109/IWCE.2004.1407323
  • Filename
    1407323