DocumentCode
2800731
Title
A 3.0 watt high efficiency C-band power MMIC
Author
Gat, M. ; Day, D.S. ; Chan, S. ; Hua, C. ; Basset, J.R.
Author_Institution
Avantek Inc., Santa Clara, CA, USA
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
331
Lastpage
334
Abstract
A two-stage C-band monolithic power amplifier is reported. The MMIC (monolithic microwave integrated circuit) incorporates full interstage matching network and partial input matching network on the chip. The amplifier delivers +35.2 dBm of power at 2 dB gain compression, 19 dB of gain, and more than 35% power added efficiency (PAE) between 5 and 6 GHz, with a CW signal applied.<>
Keywords
MMIC; field effect integrated circuits; impedance matching; microwave amplifiers; power amplifiers; power integrated circuits; 19 dB; 3 W; 35 percent; 5 to 6 GHz; C-band; SHF; high efficiency; interstage matching network; monolithic microwave integrated circuit; monolithic power amplifier; partial input matching; power MMIC; power added efficiency; two-stage; Bonding; FETs; Fingers; Frequency; Gain; High power amplifiers; Impedance matching; MMICs; Microwave amplifiers; Network-on-a-chip;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172706
Filename
172706
Link To Document