DocumentCode :
2800738
Title :
Conductometric sensors based on InGaAs/GaAs nanocoils
Author :
Bell, Dominik J. ; Rüst, Philipp ; Dong, Lixin ; Schön, Silke ; Nelson, Bradley J.
Author_Institution :
ETH Zurich, Zurich
fYear :
2007
fDate :
21-25 Jan. 2007
Firstpage :
847
Lastpage :
850
Abstract :
We present the use of integrated semiconductor nanocoils for conductometric sensors. The three-dimensional structures are made of an n-type InGaAs/GaAs bilayer. They are suspended over the chip surface and connected to one electrode on each side. The process is based on conventional batch microfabrication techniques. Process and design features that are critical for the realization of this type of device are described. High sensor performance can be achieved due to the high surface-to-volume ratio of the helical nanostructures. The use of these structures for temperature sensors and for photoconductive detectors is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microsensors; nanostructured materials; photoconducting devices; temperature sensors; 3D structures; InGaAs-GaAs; InGaAs/GaAs nanocoils; batch microfabrication techniques; conductometric sensors; helical nanostructures; n-type InGaAs/GaAs bilayer; photoconductive detectors; semiconductor nanocoils; temperature sensors; Etching; Gallium arsenide; Indium gallium arsenide; Intelligent sensors; Nanobioscience; Nanostructures; Optical sensors; Resists; Substrates; Temperature sensors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location :
Hyogo
ISSN :
1084-6999
Print_ISBN :
978-1-4244-095-5
Electronic_ISBN :
1084-6999
Type :
conf
DOI :
10.1109/MEMSYS.2007.4433178
Filename :
4433178
Link To Document :
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