DocumentCode
2800763
Title
Batch fabrication of carbon nanotubes on tips of a silicon pyramid array
Author
Takagahara, Kazuhiko ; Takei, Yusuke ; Matsumoto, Kiyoshi ; Shimoyama, Isao
Author_Institution
Univ. of Tokyo, Tokyo
fYear
2007
fDate
21-25 Jan. 2007
Firstpage
855
Lastpage
858
Abstract
We have proposed batch fabrication of silicon pyramids with upward CNTs on the tips at one time by a chemical vapor deposition (CVD) process. To synthesize upward CNTs on the pyramid tips, an upward electric field was applied to the silicon pyramid array during the CVD process. By electric field simulation and verifying experiment on silicon one-dimensional array structures, we found that CNTs tended to grow from sharp tips in our method. We fabricated the silicon pyramid array with sharp tips by anisotropic wet etching. After the CVD process, CNTs growing from the tips of the pyramids were observed by a scanning electron microscope (SEM). As a result, about 70% of 100 times 100 silicon pyramid array had CNTs on the tips. Our method would be valuable for fabricating probes of atomic force microscope (AFM) with CNTs on the tips (CNT-AFM probes).
Keywords
arrays; atomic force microscopy; batch processing (industrial); carbon nanotubes; chemical vapour deposition; elemental semiconductors; etching; nanotechnology; scanning electron microscopy; semiconductor nanotubes; silicon; AFM; CVD process; SEM; Si; anisotropic wet etching; atomic force microscope; batch fabrication; carbon nanotubes; chemical vapor deposition; electric field simulation; one-dimensional silicon array structures; scanning electron microscope; silicon pyramid array; Atmosphere; Atomic force microscopy; Carbon nanotubes; Counting circuits; Electrodes; Fabrication; Information science; Probes; Scanning electron microscopy; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro Electro Mechanical Systems, 2007. MEMS. IEEE 20th International Conference on
Conference_Location
Hyogo
ISSN
1084-6999
Print_ISBN
978-1-4244-095-5
Electronic_ISBN
1084-6999
Type
conf
DOI
10.1109/MEMSYS.2007.4433180
Filename
4433180
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