Quantum capacitance effects in carbon nanotube field-effect devices

Carbon nanotube (CNT) based transistors, for example, are especially interesting for both fundamentals of quantum transport and technology. They are quasi one-dimensional organic conductors in which electrons can propagate ballistically over very long distances. A CNT can be used as a nanometric channel for a device in which electron transmission can be modulated by a suitable gate potential, just like in standard FET devices. In this work the coherent transport properties of a coaxially gated semiconducting CNT were calculated using an ab-initio approach based on a self-consistent density-functional tight-binding method and the non-equilibrium Green´s function formalism we have previously implemented.