Title :
A 23.6 GHz sub-1/2- mu m E/D MODFET divide-by-32/64 static prescaler
Author :
Rohdin, H. ; Straznicky, J. ; Jekat, H. ; Nagy, A. ; Fischer-Colbrie, A. ; Mars, D. ; Jaeger, R.
Author_Institution :
Hewlett-Packard Co., Palo Alto, CA, USA
Abstract :
An application-ready prescaler with performance competitive with state-of-the-art R&D dividers is reported. It was designed to be a high-performance replacement for standard ECL parts in instruments. It is fabricated in a proven self-aligned contact sub-1/2-micron GaAs-based E/D-MODFET IC process which utilizes side-wall-spacer self-alignment technology to obtain 0.3-0.5 mu m gate length with conventional high-throughput contact lithography. With pseudomorphic InGaAs channels the authors have demonstrated 30 MHz-23.6 GHz prescaler operation at room temperature. The performance improves at 0 degrees C, while at 70 degrees C the upper frequency typically drops by 2 GHz. Correct high-speed pulsed-mode operation requires (1) presetting which does not degrade the performance and (2) suppression of self-oscillation during quiet periods between pulse bursts.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; high electron mobility transistors; integrated logic circuits; scaling circuits; 0 to 70 degC; 0.3 to 0.5 micron; 30 MHz to 23.6 GHz; GaAs-InGaAs-AlGaAs; IC process; MODFET; contact lithography; presetting; pseudomorphic InGaAs channels; pulsed-mode operation; self-aligned contact; self-alignment technology; side-wall-spacer; static prescaler; Circuit synthesis; Circuit testing; FETs; Frequency; Gallium arsenide; HEMTs; Instruments; Lithography; MODFETs; Pulse circuits;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172713
