Arbitrary crystallographic orientation in QDAME with Ge 7.5 nm DGFET examples

QDAME (quantum device analysis by modal evaluation) has been extended to permit device simulations with arbitrary orientation between real-space and k-space coordinate systems. The work resembles in scope the extension of NanoMOS by Rahman, et al. to permit arbitrary crystallographic orientation and its subsequent invocation by Low, et al. in the context of Ge DGFETs. This work is differentiated from theirs as follows: (i) the two-dimensional Schrodinger equation with appropriately modified traveling wave boundary conditions was solved; no assumptions are invoked concerning the device geometry or the lumping of transport along a centerline of symmetry from source to drain, (ii) ´unusual´ crystallographic directions to highlight our simulation capability and to demonstrate that current does not necessarily flow down the center of a symmetric Ge DGFET device structure were considered.