Title :
Piezoresistivity and electrical properties of poly-SiGe deposited at CMOS-compatible temperatures
Author :
Gonzalez, P. ; Haspeslagh, Luc ; Severi, Simone ; De Meyer, K. ; Witvrouw, Ann
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this work the effect of doping concentration on the piezoresistive and electrical properties of poly-SiGe deposited at temperatures compatible with MEMS integration on top of CMOS are evaluated for the first time. With proper tuning of the boron content, a gauge factor around 14 and a TCR close to 0 are achievable. These results prove the potential of using poly-SiGe as a sensing layer for MEMS-above-CMOS applications.
Keywords :
Ge-Si alloys; doping profiles; piezoresistance; semiconductor materials; CMOS-compatible temperatures; MEMS integration; SiGe; doping concentration; electrical Properties; gauge factor; piezoresistivity; CMOS integrated circuits; Doping; Micromechanical devices; Piezoresistance; Sensors; Silicon; Temperature;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618171
