Analysis of strained-Si device including quantum effect

Strained-Si technologies are actively discussed from both sides of experiments and simulations in recent years as stated in K. Rim et al. (2003) and F. M. Bufler (2003), and with progressive technology scaling, quantum transport also becomes important increasingly. The authors linked the first principle band calculation program to the FUJITSU ensemble full band Monte Carlo simulator FALCON directly, which enables to take in arbitrary biaxial strained-Si band structure easily. And also the quantum effect was implemented by Bohm potential method as stated in B. Wu et al. (2003). The strained-Si device including quantum effect was examined. The strain effect decreases with scaling to l0nm gate length regime. However, in the domain which ballistic particle is majority, the effect of strain becomes useful again by the increase of the velocity by strain at the source region. This becomes more remarkable when quantum effect is taken into account.