Treatment of point defects in nanowire MOSFETs using the nonequilibrium Green´s function formalism

This paper describes the point defect treatment in nanowire MOSFETs. The 3D Poisson equation is self-consistently coupled to the Schrodinger equation. We adopt the mode-space representation in which the 3D Schrodinger equation is divided into a 2D equation, including the confinement of the cross-section, and an ID equation describing the ballistic transport based on the nonequilibrium Green´s function formalism (NEGF). We use the simplest form of the tight-binding theory, with one orbital per atom, and considering only the first-neighbor-interactions. In this framework, equivalent to the ellipsoidal energy band approximation, influence of point defects on electronic transport is discussed.