Modeling of partial-RESET dynamics in Phase Change Memories

In this work, a physics-based analytical model for the partial-RESET operation in Phase Change Memories is proposed. The model describes the electro-thermal behavior of the memory cell and gives an insight into the dynamical phenomena involved in the amorphization process inside the chalcogenide layer. Simulations are compared to measurements carried out on a 180-nm PCM experimental chip based on the μ-trench cell architecture, showing good accuracy of the proposed model both in the case of single pulse programming and in the case of staircase-up partial-RESET programming.