Title :
3D analytical modelling of subthreshold characteristics in Pi-gate FinFET transistors
Author :
Ritzenthaler, R. ; Lime, F. ; Iñiguez, B. ; Faynot, O. ; Cristoloveanu, S.
Author_Institution :
Dept. of Electr. Eng., Rovira i Virgili Univ., Tarragona, Spain
Abstract :
A core model is developed in order to obtain, for the first time, analytical expressions of the subthreshold characteristics of advanced Pi-gate Multiple-gate FET transistors. Based on the resolution of the 3D Laplace´s equation, the interface coupling in the structure is accurately described. The short-channel characteristics (Subthreshold Slope and DIBL) are calculated and compared to experimental data with an excellent agreement. Additionally, it is shown that the proposed analytical equation for the 3D potential distribution can be used to determine the scalability of a wide range of Multiple-gate FET transistors.
Keywords :
Laplace equations; MOSFET; electronic engineering computing; solid modelling; 3D Laplace equation; 3D analytical modelling; Pi-gate FinFET transistor; Pi-gate multiple-gate FET transistor; interface coupling; short-channel characteristics; subthreshold characteristics; subthreshold slope; Analytical models; Electric potential; Electrostatics; Logic gates; Silicon; Three dimensional displays; Transistors;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618179
