Comparison of non-equilibrium Green´s function and quantum-corrected Monte Carlo approaches in nano MOS simulation

Author

Tsuchiya, Hideaki ; Ogawa, M. ; Miyoshi, T. ; Svizhenko, A. ; Anantram, M.P.

Author_Institution

Dept. of Electr. & Electron. Eng., Kobe Univ., Japan

fYear

2004

fDate

24-27 Oct. 2004

Firstpage

93

Lastpage

94

Abstract

In this paper, the authors present a joint study on comparison between the NEGF and QMC methods for an ultra-short channel device. They also discuss a role of impurity and plasmon scatterings on the drain current degradation. The present results indicate that a detailed modeling of the dominant scattering processes is required for an accurate and practical nano MOS simulation. They also discussed the carrier´s quasi-ballistic behaviors in nano-scale MOSFETs.

Keywords

Green´s function methods; MOSFET; Monte Carlo methods; ballistic transport; impurity scattering; nanoelectronics; plasmons; carrier quasi-ballistic behaviors; dominant scattering processes; drain current degradation; impurity effect; nano MOS simulation; nano-scale MOSFET; nonequilibrium Green function; plasmon scatterings; quantum-corrected Monte Carlo approaches; ultra-short channel device; Green function; MOSFETs; Monte Carlo methods; Plasmons;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on

Conference_Location

West Lafayette, IN, USA

Print_ISBN

0-7803-8649-3

Type

conf

DOI

10.1109/IWCE.2004.1407340

Filename

1407340