Title :
Comparison of non-equilibrium Green´s function and quantum-corrected Monte Carlo approaches in nano MOS simulation
Author :
Tsuchiya, Hideaki ; Ogawa, M. ; Miyoshi, T. ; Svizhenko, A. ; Anantram, M.P.
Author_Institution :
Dept. of Electr. & Electron. Eng., Kobe Univ., Japan
Abstract :
In this paper, the authors present a joint study on comparison between the NEGF and QMC methods for an ultra-short channel device. They also discuss a role of impurity and plasmon scatterings on the drain current degradation. The present results indicate that a detailed modeling of the dominant scattering processes is required for an accurate and practical nano MOS simulation. They also discussed the carrier´s quasi-ballistic behaviors in nano-scale MOSFETs.
Keywords :
Green´s function methods; MOSFET; Monte Carlo methods; ballistic transport; impurity scattering; nanoelectronics; plasmons; carrier quasi-ballistic behaviors; dominant scattering processes; drain current degradation; impurity effect; nano MOS simulation; nano-scale MOSFET; nonequilibrium Green function; plasmon scatterings; quantum-corrected Monte Carlo approaches; ultra-short channel device; Green function; MOSFETs; Monte Carlo methods; Plasmons;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407340
