Title :
Full-band particle-based analysis of device scaling for 3D tri-gate FETs
Author :
Chinev ; Branlard, J. ; Saranitiand, M. ; Aboud, S. ; Goodnick, S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
In this paper, a 3D tri-gate SOI FET with a wrap around gate geometry is studied using a full-band particle-based simulation tool as stated in M. Saraniti et al. (1999) Tri-gate FETs show superior scalability over planar device structures, including a reduction of short channel effects based on F. Yang et al. (2002). The 3D gate structure of the tri-gate FET not only plays a role in reducing DIBL by shielding the electric field lines from the drain, but also improves gate-channel controllability.
Keywords :
circuit simulation; field effect transistors; silicon-on-insulator; 3D tri-gate FET; device scalability; device scaling; electric field shielding; full-band particle-based analysis; improved gate-channel controllability; planar device structures; short channel effects; wrap around gate geometry; FETs; Silicon on insulator technology;
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
DOI :
10.1109/IWCE.2004.1407342
