Title :
Linearization of Highly-Efficient Monolithic Class E SiGe Power Amplifiers with Envelope-Tracking (ET) and Envelope-Elimination-and-Restoration (EER) at 900MHz
Author :
Lie, Donald Y C ; Popp, J.D. ; Wang, F. ; Kimball, D. ; Larson, L.E.
Author_Institution :
Department of Electrical and Computer Engineering, Texas Tech University, Lubbock, TX 79409, USA, Email: Donald.Lie@ttu.edu
Abstract :
The linearization of highly efficient monolithic SiGe Class E power amplifiers (PAs) using both Envelope-Tracking (ET) and Envelope-Elimination-and-Restoration (EER) techniques has been studied at 900MHz. Without applying any linearization, the fully-integrated SiGe PAs achieve power-added efficiency (PAE) of 66% with no off-chip matching. The overall PAE of an ET-linearized PA system is 45% at an output power of 20dBm for an 881MHz EDGE (Enhanced Data Rate for GSM Evolution) modulated signal. The ET-linearized PAs pass the stringent EDGE transmit spectrum mask, but the EER-linearized PAs do not. The PAE of the ET system is expected to reach ~50% with further efficiency improvement on the envelope amplifier.
Keywords :
GSM; Germanium silicon alloys; High power amplifiers; Power generation; Power system reliability; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Switches; Voltage;
Conference_Titel :
System-on-Chip, 2007. DCAS 2007. 6th IEEE Dallas Circuits and Systems Workshop on
Conference_Location :
Dallas, TX, USA
Print_ISBN :
978-1-4244-1680-6
Electronic_ISBN :
978-1-4244-1680-6
DOI :
10.1109/DCAS.2007.4433211
