DocumentCode :
2801238
Title :
A continuous physics-based electrothermal compact model for the study of non-linearities in III–V HEMTs
Author :
Sadi, Toufik ; Schwierz, Frank
Author_Institution :
Fachgebiet Festkorperelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
432
Lastpage :
435
Abstract :
We present a newly developed continuous physics-based electrothermal I-V compact model suitable for the study intermodulation distortion in GaAs HEMTs and MESFETs. The model, which is an improvement of the standard Chalmers model, accurately includes self-heating while significantly minimizing the need for parameter fitting. The model, which is carefully calibrated using experimental data for submicrometer arsenide pHEMTs, is employed to calculate and analyze intermodulation products using the Volterra series method.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; Volterra series; gallium arsenide; high electron mobility transistors; intermodulation distortion; semiconductor device models; GaAs; III-V HEMT nonlinearity; MESFET; Volterra series method; continuous physics-based electrothermal compact model; intermodulation distortion; intermodulation product analysis; parameter fitting; standard Chalmer model; submicrometer arsenide pHEMT; Equations; HEMTs; IP networks; Isothermal processes; Logic gates; MODFETs; Mathematical model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618185
Filename :
5618185
Link To Document :
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