Investigation of rare-earth aluminates as alternative trapping materials in Flash memories

Author

Cacciato, A. ; Suhane, A. ; Richard, O. ; Arreghini, A. ; Adelmann, C. ; Swerts, J. ; Rothschild, A. ; Van den Bosch, G. ; Breuil, L. ; Bender, H. ; Jurczak, M. ; Debusschere, I. ; Kittl, J.A. ; Van Houdt, J.

Author_Institution

Imec vzw, Leuven, Belgium

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

436

Lastpage

439

Abstract

The integration of La, Gd, and Lu aluminates in a Charge-Trapping Flash (CTF) memory flow as alternative trapping materials is evaluated. It is found that, in order to control the mixing of the aluminates with the tunnel oxide, nitride (for Gd) or nitride + oxide (for La and Lu) buffer layers have to be used. It is also found that during the post-deposition annealing treatments, the nitride buffer layer mixes with the tunnel oxide. This results in very good erase and endurance performance, which is attributed to enhanced hole tunneling from the Si substrate.

Keywords

aluminium compounds; annealing; flash memories; alternative trapping materials; charge-trapping flash memory flow; nitride buffer layer; post-deposition annealing treatments; rare-earth aluminates; Aluminum oxide; Annealing; Buffer layers; Charge carrier processes; Dielectrics; Flash memory; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618186

Filename

5618186