Fluorinated CMOS HfO2 for high performance (HP) and low stand-by power (LSTP) application by pre- and post-CF4 plasma passivation

Fluorine distribution engineering in HfO₂ to get higher performance (HP EOT=1.2 nm) and low stand-by power (LSTP EOT=1.8 nm) CMOS device with 48% driving current enhancement for HP, 73% leakage reduction for LSTP were demonstrated. Better uniformity (50% VtU and 9% IdU reduction) and excellent reliability, P/NBTI, of n-/p-MOSFET were achieved A new physical model of fluorine re-incorporation was proposed to explain the turnaround of NBTI and the much improvement of NBTI for HP and LP device.