Title :
Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide
Author :
Kim, Wan Gee ; Sung, Min Gyu ; Kim, Sook Joo ; Kim, Ja Yong ; Moon, Ji Won ; Yoon, Sung Joon ; Kim, Jung Nam ; Gyun, Byung Gu ; Kim, Taeh Wan ; Kim, Chi Ho ; Byun, Jun Young ; Kim, Won ; Youn, Te One ; Yoo, Jong Hee ; Oh, Jang Won ; Kim, Ho Joung ; Joo, M
Author_Institution :
R&D Div., Hynix Semicond. Inc., Icheon, South Korea
Abstract :
In this paper, a systematic approach using HfO2, ZrO2 and TiO2 with TiN or Ti/TiN electrode has been conducted to research the best material for ReRAM device integration. From the experimental results and proposed model, the proper electrical properties such as the stability of switching variation, low current and voltage operation, long endurance and retention characteristics are obtained with a TiN/Ti/HfO2/TiN structure.
Keywords :
random-access storage; HfO2; ReRAM device integration; Ti-TiN; TiN; TiO2; ZrO2; electrical properties; electrode; long endurance; low current; resistance random access memory; retention characteristics; switching characteristics; switching variation; transition metal oxide; voltage operation; Current measurement; Electrodes; Materials; Resistance; Switches; Tin;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618197
