DocumentCode
2801532
Title
Oxide-based RRAM: Physical based retention projection
Author
Gao, B. ; Kang, J.F. ; Zhang, H.W. ; Sun, B. ; Chen, B. ; Liu, L.F. ; Liu, X.Y. ; Han, R.Q. ; Wang, Y.Y. ; Fang, Z. ; Fang, Zhou ; Yu, H.Y. ; Kwong, D.L.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
392
Lastpage
395
Abstract
Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices.
Keywords
failure analysis; probability; random-access storage; failure probability; memory device lifetime; oxide-based RRAM; oxygen vacancy filament; physical based retention projection; resistive random access memory; retention failure mechanism; Resistance; Stress; Switches; Temperature distribution; Temperature measurement; Time measurement; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5618200
Filename
5618200
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