Title :
Oxide-based RRAM: Physical based retention projection
Author :
Gao, B. ; Kang, J.F. ; Zhang, H.W. ; Sun, B. ; Chen, B. ; Liu, L.F. ; Liu, X.Y. ; Han, R.Q. ; Wang, Y.Y. ; Fang, Z. ; Fang, Zhou ; Yu, H.Y. ; Kwong, D.L.
Author_Institution :
Inst. of Microelectron., Peking Univ., Beijing, China
Abstract :
Based on the retention failure mechanism of high resistance state due to reconstruction of oxygen vacancy filament in the rupture region, a physical model is proposed to quantify the retention failure behavior of oxide-based RRAM devices, supported by experiments. A new data retention evaluation methodology is proposed to predict the failure probability and lifetime of the memory devices.
Keywords :
failure analysis; probability; random-access storage; failure probability; memory device lifetime; oxide-based RRAM; oxygen vacancy filament; physical based retention projection; resistive random access memory; retention failure mechanism; Resistance; Stress; Switches; Temperature distribution; Temperature measurement; Time measurement; Voltage measurement;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618200
