DocumentCode :
2801584
Title :
Modeling impact of electric field and strain on the leakage of embedded SiGe source/drain junctions
Author :
Rodríguez, A. Luque ; Tejada, J. A Jiménez ; Rodríguez-Bolivar, S. ; González, M. Bargallo ; Eneman, G. ; Claeys, C. ; Simoen, E.
Author_Institution :
Dept. de Electron. y Tecnol. de los Comput., Univ. de Granada, Granada, Spain
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
384
Lastpage :
387
Abstract :
A study of the leakage current in strained p+n Si1-xGex/Si hetero-junctions is presented. The reduction in the band gap, induced by stress forces, and the doping level at the hetero-interface, due to the use of halo implantations, are varied by changing the recess depth. A comparison between simulation results and experimental data is presented to analyze the validity of the models used in this work.
Keywords :
leakage currents; semiconductor junctions; SiGe; band gap; doping level; electric field; embedded SiGe source/drain junctions; halo implantation; hetero-interface; leakage current; modeling impact; recess depth; strain; stress forces; Electric fields; Junctions; Leakage current; Silicon; Silicon germanium; Stress; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618203
Filename :
5618203
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2801584
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