Breaching the kT/q limit with dopant segregated Schottky barrier resonant tunneling MOSFETs: A computationnal study

We study here, using non-equilibrium Green´s function quantum simulations, the impact of dopant segregation (DS) on Schottky barrier (SB) nanoscale transistors for the implementation of ultimate CMOS with low series resistance and steep slope. Owing to their adequate multi-barrier structure, DS-SB transistor can present a gate modulated barrier resonant tunneling (MBRT) effect that allows them to breach the kT/q subthreshold slope limit of classical MOSFET, and therefore pave a way towards steep slope, low S/D resistance electronics. In order to reach their ultimate on-current performances however, new materials with lower SB height and/or means to implant and activate ultra high dopant segregation levels (in the order 10²¹ cm^-3) will be needed, especially when considering that Schottky barrier height will be increased through quantum confinement.