Optimized active region design for high speed 850 nm VCSELs

Author

Gustavsson, J.S. ; Healy, S.B. ; Westbergh, P. ; Haglund, Å ; Larsson, A. ; O´Reilly, E.P.

Author_Institution

Dept. of Microtechnol. & Nanosci., Chalmers Univ. of Technol., Goteborg, Sweden

fYear

2009

fDate

14-19 June 2009

Firstpage

1

Lastpage

1

Abstract

In this work, we explore the use of strained InGaAs/AlGaAs QWs and benchmark the performance against conventional GaAs/AlGaAs QWs.VCSELs with an optimized InGaAs/AlGaAs QW active region have a modulation bandwidth of 20 GHz at 25degC and 15 GHz at 85degC and have enabled error-free transmission over 50 (100) m multimode fiber up to 32 (25) Gb/s at a bias current density as low as 11 kA/cm² under direct current modulation.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; gallium arsenide; high-speed optical techniques; indium compounds; optical fibre communication; optical transmitters; quantum well lasers; surface emitting lasers; InGaAs-AlGaAs; bias current density; direct current modulation; error-free transmission; high-speed VCSEL; laser active region design; modulation bandwidth; multimode fiber; strained quantum well; temperature 25 C; temperature 85 C; wavelength 850 nm; Bandwidth; Charge carrier density; Design optimization; Electrons; Gallium arsenide; Indium gallium arsenide; Photonics; Resonance; Solid modeling; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on

Conference_Location

Munich

Print_ISBN

978-1-4244-4079-5

Electronic_ISBN

978-1-4244-4080-1

Type

conf

DOI

10.1109/CLEOE-EQEC.2009.5192928

Filename

5192928