Scaling pFET hot-electron injection

This paper elaborates on a previously introduced (Duffy and Hasler, 2003) analytical model for hot-electron injection in p-channel MOSFETs. Hot-electron injection is frequently exploited to remove stored charge in floating-gate circuits. The hole-induced impact ionization provides an otherwise empty conduction band with electrons. Although most of the electrons migrate to the bulk, under the proper conditions some inject through the gate oxide. It has been shown that impact ionization and hot-electron injection can be analytically solved using a self-consistent model derived from a spatially-varying Boltzmann transport equation (Conwell, 1967; Hasler et al., 1998). The primary mechanisms for altering the distribution function (and hence the collision operators for the BTE) are the aforementioned impact ionization and optical phonon absorption and emission.