Dopant-independent and voltage-selectable silicon-nanowire-CMOS technology for reconfigurable logic applications

In this paper, we report on the fabrication and characterization of a novel voltage-selectable (VS) nanowire (NW) CMOS technology suitable to extend the flexibility in circuit design and reconfigurable logic applications. Silicon NW-structures with Schottky-S/D-junctions on silicon-on-insulator (SOI) substrate are used to realize dopant-independent unipolar CMOS-like transistors. A selection of the device type (PMOS or NMOS) is performed by application of an appropriate back-gate bias. The versatile programming capability of this approach is demonstrated in a VS-NW-CMOS inverter set-up.