DocumentCode :
2801828
Title :
Remote Hasma Deposited Amorphous Silicon with In-Situ Hydrogen Etching
Author :
Lo, Yoon F. ; Collis, Ward J.
Author_Institution :
Department of Electrical Engineering, North Carolina A&T State University
fYear :
1992
fDate :
1-3 Mar 1992
Firstpage :
64
Lastpage :
66
Keywords :
Amorphous silicon; Etching; Helium; Hydrogen; Plasma applications; Plasma chemistry; Plasma measurements; Plasma temperature; Radio frequency; Semiconductor thin films;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
System Theory, 1992. Proceedings. SSST/CSA 92. The 24th Southeastern Symposium on and The 3rd Annual Symposium on Communications, Signal Processing Expert Systems, and ASIC VLSI Design
ISSN :
0094-2898
Print_ISBN :
0-8186-2665-8
Type :
conf
DOI :
10.1109/SSST.1992.712190
Filename :
712190
Link To Document :
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