DocumentCode
2801949
Title
Extracting accurate position and energy level of oxide trap generating random telegraph noise(RTN) in recessed channel MOSFET´s
Author
Park, Sunyoung ; Lee, Sanghoon ; Kang, Yeonsung ; Park, Byung-Gook ; Lee, Jong-Ho ; Lee, Jooyoung ; Jin, Gyoyoung ; Shin, Hyungcheol
Author_Institution
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
337
Lastpage
340
Abstract
In this paper, we have proposed an extraction method to find accurate oxide trap locations and energy level in recessed channel structure such as SRCAT. Analytical models for poly depletion effect and the surface potential variation in the cylindrical coordinate were derived and applied to DRAM SRCAT.
Keywords
DRAM chips; MOSFET; DRAM SRCAT; cylindrical coordinate; energy level; extraction method; metal-oxide-semiconductor field effect transistors; oxide trap locations; polydepletion effect; random telegraph noise; recessed channel MOSFET; recessed channel structure; surface potential variation; Equations; Logic gates; MOSFETs; Mathematical model; Noise; Random access memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5618221
Filename
5618221
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