Title :
Extracting accurate position and energy level of oxide trap generating random telegraph noise(RTN) in recessed channel MOSFET´s
Author :
Park, Sunyoung ; Lee, Sanghoon ; Kang, Yeonsung ; Park, Byung-Gook ; Lee, Jong-Ho ; Lee, Jooyoung ; Jin, Gyoyoung ; Shin, Hyungcheol
Author_Institution :
Sch. of Electr. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
In this paper, we have proposed an extraction method to find accurate oxide trap locations and energy level in recessed channel structure such as SRCAT. Analytical models for poly depletion effect and the surface potential variation in the cylindrical coordinate were derived and applied to DRAM SRCAT.
Keywords :
DRAM chips; MOSFET; DRAM SRCAT; cylindrical coordinate; energy level; extraction method; metal-oxide-semiconductor field effect transistors; oxide trap locations; polydepletion effect; random telegraph noise; recessed channel MOSFET; recessed channel structure; surface potential variation; Equations; Logic gates; MOSFETs; Mathematical model; Noise; Random access memory;
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
Print_ISBN :
978-1-4244-6658-0
DOI :
10.1109/ESSDERC.2010.5618221
