DocumentCode :
280195
Title :
Electro-optic modulation of 1.5 μm light in an active InGaAsP/InP quantum well waveguide
Author :
White, I.H. ; Penty, R.V. ; O´Cochlain, C.R. ; Mears, R.J. ; Whiteaway, J.E.A. ; Henshall, G.D.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
fYear :
1990
fDate :
33037
Firstpage :
42583
Lastpage :
42585
Abstract :
The authors report an InGaAsP/InP phase modulator operating in the 1.5 μm wavelength band. Phase modulation of 7.5°/mA and 1.7°/mA of injected current have been measured for TE and TM polarised light respectively at a signal wavelength of 1.52 μm
Keywords :
III-V semiconductors; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optical waveguides; semiconductor quantum wells; 1.5 micron; III-V semiconductor; InGaAsP-InP; active waveguide; electrooptic modulation; electrorefractive effects; phase modulator; quantum well waveguide;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Applications of Quantum Wells in Optoelectronics, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
190386
Link To Document :
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