Disordering of long wavelength InGaAs/InGaAlAs multiple quantum wells using boron and fluorine

Author

Bryce, A.C. ; Marsh, J.H. ; Jeynes, C. ; Glew, R.W.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1990

fDate

33037

Firstpage

42644

Lastpage

42647

Abstract

Both fluorine and boron produced a blue shift in the exciton energy. Fluorine gave the largest shifts, 45 meV, and appears to rapidly cause the total intermixing of the quantum wells. Boron produced only small shifts in the exciton peak. Annealing at temperatures greater than 650°C caused the indium and gallium in the unimplanted material to interdiffuse producing a red shift in the exciton peak. Implantation with fluorine or boron causes the aluminium to diffuse and reverses this effect at these temperatures

Keywords

III-V semiconductors; annealing; excitons; gallium arsenide; indium compounds; ion beam mixing; ion implantation; luminescence of inorganic solids; optical waveguides; photoluminescence; red shift; semiconductor doping; semiconductor quantum wells; spectral line shift; 550 to 760 C; B implantation; F implantation; III-V semiconductors; InGaAs-InGaAlAs quantum wells; InGaAs-InGaAlAs:B; InGaAs-InGaAlAs:F; annealing temperature long wavelength MQW; blue shift; diffusion activation; exciton energy; impurity induced disordering; optical waveguides; photoluminescence; red shift; total intermixing;

fLanguage

English

Publisher

iet

Conference_Titel

Applications of Quantum Wells in Optoelectronics, IEE Colloquium on

Conference_Location

London

Type

conf

Filename

190388