A novel approach to compact model parameter extraction for excimer laser annealed complementary thin film transistors

In this paper, a physical-based model parameter extraction technique (Y. Li et al., 2003) for excimer laser annealed LPTS TFTs is proposed. Comparison between the measurement and simulation results shows that the proposed method exhibits very good accuracy and robustness with respect to the widely used RPI model and its variants. Several electrical characteristics of n-type laser annealed LTPS TFT, such as I/sub DS/ - V/sub GS/, transconductance (G /sub m/), and output conductance (G/sub ds/) are accurately simulated and calculated with the different two models, the RPI TFT VI and V2 models, respectively. The proposed extraction procedure is suitable for the circuit simulation of both n- and p-type laser annealed LTPS TFTs with the well-known RPI TFT V1 and V2 models.