Title :
Optical waveguides formed in InGaAs/InP multi quantum wells by phosphorous implantation
Author :
Whitehead, N.J. ; Gillin, W.P. ; Bradley, I.V. ; Weiss, B.L. ; Claxton, P.
Author_Institution :
Dept. of Electron. & Electr. Eng., Surrey Univ., Guildford, UK
Abstract :
Phosphorous implantation and subsequent annealing has been used to selectively disorder In0.53Ga0.47As/InP MQW material. Photoluminescence measurements have shown that band gap modification occurs during annealing and that this process is probably due to implantation disorder rather than diffusion of the phosphorous atom. These results also suggest that when the disorder level exceeds the amorphous threshold the mixing process is inhibited. The selective disordering method has been used to form stripe optical waveguides with propagation losses which increase with disorder level. The lowest propagation loss measured was 4.4 dB/cm
Keywords :
III-V semiconductors; annealing; gallium arsenide; indium compounds; ion beam mixing; ion implantation; luminescence of inorganic solids; optical losses; optical waveguides; photoluminescence; semiconductor doping; semiconductor quantum wells; III-V semiconductors; INGaAs-InP quantum wells; InGaAs-InP:P; P implantation; annealing; band gap modification; implantation disorder; photoluminescence; propagation losses; selective disordering method; stripe optical waveguides;
Conference_Titel :
Applications of Quantum Wells in Optoelectronics, IEE Colloquium on
Conference_Location :
London
