DocumentCode :
2802023
Title :
SET switching effects on PCM endurance
Author :
Marca, Vincenzo Della ; Carboni, Francesca ; Larcher, Luca ; Padovani, Andrea ; Pavan, Paolo
Author_Institution :
Dipt. di Ing. dell´´Inf., Univ. di Modena e Reggio Emilia, Modena, Italy
fYear :
2010
fDate :
14-16 Sept. 2010
Firstpage :
321
Lastpage :
324
Abstract :
In this paper we report results on PCM endurance failure characterization. We show that endurance failure is related to SET pulse features and we analyze and model SET operation to obtain a better understanding and improve endurance performance. Results give interesting insights on the crystallization process of GST material. SET obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for optimized SET/RESET operation to achieve better endurance.
Keywords :
antimony compounds; crystallisation; failure analysis; germanium compounds; low-power electronics; phase change memories; GST material; Ge2Sb2Te5; PCM endurance failure characterization; SET pulse features; SET switching effects; constant energy law; crystallization process; optimized SET-RESET operation; phase change memory device; Analytical models; Numerical models; Phase change materials; Phase change memory; Resistance; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location :
Sevilla
ISSN :
1930-8876
Print_ISBN :
978-1-4244-6658-0
Type :
conf
DOI :
10.1109/ESSDERC.2010.5618227
Filename :
5618227
Link To Document :
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