SET switching effects on PCM endurance

Author

Marca, Vincenzo Della ; Carboni, Francesca ; Larcher, Luca ; Padovani, Andrea ; Pavan, Paolo

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Modena e Reggio Emilia, Modena, Italy

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

321

Lastpage

324

Abstract

In this paper we report results on PCM endurance failure characterization. We show that endurance failure is related to SET pulse features and we analyze and model SET operation to obtain a better understanding and improve endurance performance. Results give interesting insights on the crystallization process of GST material. SET obeys to a constant energy law. Fast SET pulses require high power; slow SET pulses can be implemented in low power applications. Results may be used for optimized SET/RESET operation to achieve better endurance.

Keywords

antimony compounds; crystallisation; failure analysis; germanium compounds; low-power electronics; phase change memories; GST material; Ge₂Sb₂Te₅; PCM endurance failure characterization; SET pulse features; SET switching effects; constant energy law; crystallization process; optimized SET-RESET operation; phase change memory device; Analytical models; Numerical models; Phase change materials; Phase change memory; Resistance; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618227

Filename

5618227