Electrostatics of 3D carbon nanotube field-effect transistors

The electrostatics of a three-dimensional CNFET structure is studied. The paper is an extension to 3D structures, of previous work done for 2D structures. Previous work has shown that one-dimensional channels experience long range doping by the gate and contact electrodes and are very sensitive to the electrostatic environment. We examine how the three-dimensional environment affects the charge transfer from the metal contacts into a 30nm short intrinsic, semiconducting CNT, along the length of the tube under equilibrium conditions.