Title :
Gate sizing using incremental parameterized statistical timing analysis
Author :
Guthaus, M.R. ; Venkateswaran, N. ; Visweswariah, C. ; Zolotov, V.
Author_Institution :
Dept. of EECS, Michigan Univ., Ann Arbor, MI, USA
Abstract :
As technology scales into the sub-90 nm domain, manufacturing variations become an increasingly significant portion of circuit delay. As a result, delays must be modeled as statistical distributions during both analysis and optimization. This paper uses incremental, parametric statistical static timing analysis (SSTA) to perform gate sizing with a required yield target. Both correlated and uncorrelated process parameters are considered by using a first-order linear delay model with fitted process sensitivities. The fitted sensitivities are verified to be accurate with circuit simulations. Statistical information in the form of criticality probabilities are used to actively guide the optimization process which reduces run-time and improves area and performance. The gate sizing results show a significant improvement in worst slack at 99.86% yield over deterministic optimization.
Keywords :
delays; integrated circuit design; integrated circuit yield; statistical analysis; timing jitter; IC design; IC yield; circuit simulation; correlated parameter; fitted process sensitivity; gate sizing; linear delay; run-time; statistical static timing analysis; Circuit optimization; Circuit simulation; Delay lines; Manufacturing; Performance analysis; Performance loss; Probability; Runtime; Statistical distributions; Timing;
Conference_Titel :
Computer-Aided Design, 2005. ICCAD-2005. IEEE/ACM International Conference on
Print_ISBN :
0-7803-9254-X
DOI :
10.1109/ICCAD.2005.1560213