Simulation of Si and Ge UTB MOSFETs using Monte Carlo method based on the quantum Boltzmann equation

As the CMOS technology scaling down to sub 0.1 /spl mu/m region, the quantum effects become obvious. From quantum kinetics equation and Wigner distribution function, the quantum Boltzmann equation (QBE) is investigated by Haug and Jauho (1998), Hansch (1991) and Tsuchiya and Miyoshi (1999). Comparing to semi-classical Boltzmann equation (BTE), quantum potential according to Haug and Jauho (1998), Hansch (1991) and Tsuchiya and Miyoshi (1999) and collision broadening according to Haug and Jauho (1998), Jauho and Reggiani (1988) and Register and Hess (1999) are two of the key QM effects in QBE that describe the quantum effect in real space and momentum space respectively. In this paper the QBE is solved using self-consistent ensemble full band Monte Carlo (MC) method by Jungemann (1999), and the Si and Ge UTB MOSFET is simulated use this method.