3d Monte Carlo simulation of FinFET using FMM algorithm

Conventional bulk MOSFETs will eventually fail as devices are scaled down toward nanoscale regime due to severe short channel and tunneling effects. Because of these issues, fully-depleted double-gate (DG) MOSFETs emerge as a solution for next generation nanoelectronic devices. Among different DG devices, FinFETs have evolved as the most promising candidate because of their good immunity to short channel effects. In such devices, quantum effects start dominating the device performance due to ultra short dimensions so that simple analytical models should be replaced by comprehensive approaches. We use 3D Monte Carlo device simulator with non-parabolic band-structure in conjunction with the novel effective potential scheme by Ferry et al. (2000), for treatment of quantization effects. Moreover the recently proposed FMM algorithm by Greengard and Rokhlin (1997) for fast and efficient calculation of Coulomb interaction is included.