Scattering from body thickness fluctuations in double gate MOSFETs: an ab initio Monte Carlo simulation study

In this paper we present an ab initio approach for including body thickness variation effects in 3D Monte Carlo simulation studies through the real space trajectories of Monte Carlo particles moving and scattering in the presence of a quantum potential obtained from the solution of the density gradient equation by Ancona and Iafrate (1989). This approach is used to study the mobility degradation associated with body thickness variation in large self-averaging devices and the transport and performance variation in small devices introduced by the unique body thickness pattern in each one of them.