• DocumentCode
    280247
  • Title

    MOCVD growth of indium phosphide and its related materials

  • Author

    Nelson, A.W.

  • Author_Institution
    Epitaxial Products Int., Cardiff, UK
  • fYear
    1990
  • fDate
    33045
  • Firstpage
    42401
  • Lastpage
    42403
  • Abstract
    InP and the related lattice matched compounds, InGaAs, InGaAsP, InAlAs and InGaAlAs are now becoming the materials of choice for a wide range of optical, optoelectronic and electronic devices and circuits. In applications such as optical fibre communications systems InP and its related materials have become a multi-million pound industry. One of the most appropriate technologies capable of enhancing the performance and satisfying the large scale manufacturing criteria for these materials is Metal Organic Vapour Phase Epitaxy (MOVPE)
  • Keywords
    III-V semiconductors; chemical vapour deposition; indium compounds; semiconductor growth; vapour phase epitaxial growth; InAlAs; InGaAlAs; InGaAs; InGaAsP; InP; MOCVD growth; MOVPE; Metal Organic Vapour Phase Epitaxy; large scale manufacturing; lattice matched compounds; optical fibre communications systems; related materials; semiconductors;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    InP Based Materials, Devices and Integrated Circuits, IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • Filename
    190458