GaAs-on-InP MESFETs for OEICs

Long wavelength opto-electronic integrated circuits (OEICs) are expected to be important components for future telecommunication systems e.g. as receivers in local loop optical fibre systems. The combination of lattice matched optical devices and mismatched GaAs on InP electronics is an attractive approach to realise OEICs. Lattice matched optical devices are preferred from reliability considerations and GaAs MESFET electronics is a well established technology. This paper reports the growth and fabrication technologies developed to produce integrable GaAs MESFETs on InP and the performance of these devices. Concern that lattice mismatched electronics may present a reliability hazard is addressed for the first time and results of temperature overstressing are presented. Application of this MESFET technology to a simple PIN-FET receiver is demonstrated