Author :
Luy, J.-F. ; Russer, P.
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
Abstract :
Millimeterwave transit time devices are monolithically integrated on a high resistivity silicon substrate. The resonant structure acts as an active antenna at 76.5 GHz with a synchronisation network. Acting as a subharmonic synchronisation oscillator, a coplanar SiGe MMIC for 25.5 GHz power generation is described. The realized module shows a frequency tuning range of >250 MHz which can be adjusted by the frequency of the synchronisation oscillator.
Keywords :
Ge-Si alloys; IMPATT oscillators; MIMIC; MMIC oscillators; active antennas; circuit tuning; millimetre wave antennas; millimetre wave oscillators; modules; semiconductor materials; synchronisation; 25.5 GHz; 76.5 GHz; HBT oscillator; SHF power generation; Si; SiGe; active antenna; coplanar SiGe MMIC; frequency tuning range; high resistivity Si substrate; millimeter-wave transit time devices; module; monolithic integration; resonant structure; subharmonic synchronisation oscillator; synchronisation network; Frequency synchronization; Impedance; Injection-locked oscillators; MIMICs; Millimeter wave communication; Millimeter wave radar; Millimeter wave technology; Monolithic integrated circuits; Schottky diodes; Silicon;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598753
