On the electrostatics of double-gate and cylindrical nanowire MOSFETs

In view of a number of roadblocks which prevent standard MOSFET scaling according to the ITRS provisions, new device architectures are being investigated in order to exploit the ultimate potential of the CMOS technology. Among such architectures, double-gate (DG) MOSFETs have been developed in view of their performance advantages, i.e. the containment of the short-channel and DIBL effects. In this work we address the electrostatics of fully-depleted DG and CNW MOSFETs at the miniaturization limit of 25 nm effective channel length. In doing so, we solve a 2D Poisson equation coupled with as many 1D Schrodinger equations as the number of mesh points along the channel, and work out a rigorous perturbative approach to the solution of the Schrodinger equation, based on the expansion of the energy eigenfunctions on the complete set of the unperturbed eigenfunctions.