A microscopic quantum simulation of Si/SiO/sub 2/ interface roughness scattering in silicon nanowire transistors

The silicon nanowire transistor (SNWT) has attracted broad attention as a promising device structure for future integrated circuits. As a result, the exploration of carrier transport and the modeling of various scattering mechanisms in Si nanowires become increasingly important. In this work, we perform a microscopic, quantum-mechanical simulation of Si/SiO/sub 2/ interface roughness scattering (so called "surface roughness scattering (SRS)") in SNWTs. In brief, this work provides an opportunity to understand the physics of SRS in SNWTs, which can be substantially different from that in planar MOSFETs.