Title :
Three-dimensional masterslice MMIC on Si substrate
Author :
Toyoda, I. ; Nishikawa, K. ; Tokumitsu, T. ; Kamogawa, K. ; Yamaguchi, C. ; Hirano, M. ; Aikawa, M.
Author_Institution :
NTT Wireless Syst. Labs., Kanagawa, Japan
Abstract :
This paper describes Si based three-dimensional MMIC technology. This technology greatly improves the operating frequency of Si MMICs up to the Ku-band and makes them competitive with GaAs MMICs in the higher frequency band. An X-band amplifier and highly integrated single-chip receiver using Si bipolar transistors are demonstrated to highlight the advantages of the Si 3-D MMIC technology. Cost estimation compared with conventional GaAs 2-D MMICs is also discussed.
Keywords :
MMIC amplifiers; bipolar MMIC; economics; elemental semiconductors; integrated circuit design; integrated circuit manufacture; microwave amplifiers; silicon; Ku-band; Si; X-band amplifier; bipolar transistors; cost estimation; operating frequency; single-chip receiver; three-dimensional masterslice MMIC; Bipolar transistors; Costs; Fabrication; Frequency; Gallium arsenide; Gold; Laboratories; MMICs; Radiofrequency integrated circuits; Substrates;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE
Conference_Location :
Denver, CO, USA
Print_ISBN :
0-7803-4063-9
DOI :
10.1109/RFIC.1997.598755
