DocumentCode :
2803032
Title :
Computer simulation of magnetization for vertically coupled nanoscale quantum rings
Author :
Yiming Li
Author_Institution :
Dept. of Computational Nanoelectronics, National Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2004
fDate :
24-27 Oct. 2004
Firstpage :
259
Lastpage :
260
Abstract :
In this paper we computationally investigate the energy spectra and magnetization for a system consisting of vertically coupled nanoscale semiconductor quantum rings (VCNSQRs) under an external magnetic field B. We use the three-dimensional (3D) effective one-band Hamiltonian, the energy- and position-dependent quasi-particle effective mass approximation, and the Ben Daniel-Duke boundary conditions. For a system consisting of vertically 2-coupled nanoscale InAs/GaAs quantum rings, our 3D simulation finds that its magnetization (M) is non-periodical oscillating function of B due to penetration of B into the torus and vertically coupled regions. It depends not only on the ring´s radius (e.g., base, inner, and outer radius) but also the inter-distance (d) of stacked layers. Jumping period of M is non-periodical and the jumping magnitude is gradually weakened when B is increased. Numerical results provide interesting information for exploring the energy shell structure of vertically coupled nanoscale semiconductor quantum rings. We believe that the study is useful for optoelectronics, spintronics, and quantum Q-bit applications using these structures.
Keywords :
III-V semiconductors; effective mass; gallium arsenide; indium compounds; magnetisation; nanoelectronics; quasiparticles; semiconductor quantum wells; 3D effective one-band Hamiltonian; Ben Daniel-Duke boundary conditions; InAs-GaAs; energy shell structure; energy spectra; energy-dependent quasiparticle effective mass approximation; jumping magnitude; jumping period; magnetic field; magnetization simulation; position-dependent quasiparticle effective mass approximation; stacked layers; vertically coupled nanoscale semiconductor quantum rings; vertically coupled regions; Gallium compounds; Indium compounds; Magnetization processes; Quantum wells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2004. IWCE-10 2004. Abstracts. 10th International Workshop on
Conference_Location :
West Lafayette, IN, USA
Print_ISBN :
0-7803-8649-3
Type :
conf
DOI :
10.1109/IWCE.2004.1407427
Filename :
1407427
Link To Document :
بازگشت